CMS-S060-080
SCHOTTKY BARRIER DIODE
Features :
* Extremely low forward volts * Guard ring protection * Low reverse leakage current
A
B
Electrical Characteristics
Chip size(A):
1.
524* 1.
524 mm2
Bond Pad size(B) :
1.
422 *1.
422 mm2
Thickness :
300µm ± 20µm
Metalization : Anode Ti/Ni/Ag
Metalization : Cathode Ti/Ni/Ag
Sym.
Spec.
Limit
Unit
Maximum Instantaneous Forward Volt at IF : 3.
0Amp.
25°C
VF max
0.
83
Volt
Minimum Instantaneous Reverse Voltage at IR : 300 uA 25°C
VR min.
83
Minimum Non-repetitive Peak Surge current at 25°C
IFSM
80
Storage Temperature
TSTG
-65 to +125
Volt.
Amp
°C
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