2 – 16 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-13336
Features
• Low Noise Figure: 1.
4␣ dB Typical at 12␣ GHz
• High Associated Gain: 9.
0␣ dB Typical at 12␣ GHz
• High Output Power: 17.
5␣ dBm Typical P 1 dB at 12␣ GHz
• Cost Effective Ceramic Microstrip Package
• Tape-and-Reel Packaging Option Available[1]
Description
The ATF-13336 is a high performance gallium arsenide
Schottkybarrier-gate field effect
transistor housed in a cost effective microstrip package.
Its premium noise figure makes this device appropriate for use in low noise amplifiers operating in the 2-16␣ GHz frequency range.
36 micro-X Package
This GaAs FET device has a nominal 0.
3 micron gate length with a to...