0.
5 – 12 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-10236
Features
• Low Noise Figure: 0.
8␣ dB Typical at 4␣ GHz
• Low Bias: VDS= 2 V, IDS= 20␣ mA
• High Associated Gain: 13.
0␣ dB Typical at 4␣ GHz
• High Output Power: 20.
0␣ dBm Typical P1dBat 4␣ GHz
• Cost Effective Ceramic Microstrip Package
• Tape-And-Reel Packaging Option Available [1]
Description
The ATF-10236 is a high performance gallium arsenide
Schottky-barriergate field effect
transistor housed in a cost effective microstrip package.
Its low noise figure makes this device appropriate for use in the first and second stages of low noise amplifiers operating in the 0.
5-12␣ GHz frequency range.
This GaAs FET device has a ...