2 – 16 GHz General Purpose Gallium Arsenide FET
Technical Data
ATF-26884
Features
• High Output Power: 18.
0␣ dBm Typical P 1dB at 12␣ GHz
• High Gain: 9.
0 dB Typical GSS at 12␣ GHz
• Low Cost Plastic Package
• Tape-and-Reel Packaging Option Available[1]
Description
The ATF-26884 is a high performance gallium arsenide
Schottkybarrier-gate field effect
transistor
housed in a cost effective microstrip package.
This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range.
This GaAs FET device has a nominal 0.
3 micron gate length with a total gate periphery of 250␣ microns.
Proven gold based metallization systems and nit...