2 – 10 GHz Medium Power Gallium Arsenide FET
Technical Data
ATF-46101
Features
• High Output Power: 27.
0␣ dBm Typical P 1dB at 4␣ GHz
• High Gain at 1 dB Compression: 12.
0␣ dB Typical G 1dB at 4␣ GHz
• High Power Efficiency: 38% Typical at 4␣ GHz
Description
The ATF-46101 is a gallium arsenide
Schottky-barrier-gate field effect
transistor designed for medium power, linear amplification in the 2 to 10 GHz frequency range.
This nominally 0.
5␣ micron
gate length GaAs FET is an interdigitated four-cell structure using airbridge interconnects between drain fingers.
Total gate periphery is 1.
25␣ millimeters.
Proven gold based metallization systems and nitride passivation assure a rugged, reliab...