0.
5 – 6 GHz General Purpose Gallium Arsenide FET
Technical Data
ATF-21186
GAIN (dB)
211
Features
• Low Noise Figure: 0.
5 dB Typ.
@ 2 GHz
• High Output Power: 19 dBm Typ.
P1dB @ 2 GHz
• High MSG: 13.
5 dB Typ.
@ 2 GHz
• Low Cost Surface Mount Plastic Package
• Tape-and-Reel Packaging Option Available[1]
Note: 1.
Refer to “Tape-and-Reel Packaging for
Surface Mount Semiconductors”.
30
20 MSG
10 S 21
MAG
0 0.
1
1 FREQUENCY (GHz)
10
ATF-21186 Insertion Power Gain, Maximum Available Gain, and Maximum Stable Gain vs.
Frequency.
VDS = 2 V, IDS = 15 mA.
Description
Agilent’s ATF-21186 is a low cost Gallium Arsenide
Schottky barrier-gate field effect
transistor housed in a surface mount plasti...