0.
5 – 10 GHz Low Noise Gallium Arsenide FET
Technical Data
ATF-25170
Features
• Low Noise Figure: 0.
8 dB Typical at 4 GHz
• High Associated Gain: 14.
0 dB Typical at 4 GHz
• High Output Power: 21.
0 dBm Typical P1 dB at 4 GHz
• Hermetic Gold-Ceramic Microstrip Package
Description
The ATF-25170 is a high performance gallium arsenide
Schottkybarrier-gate field effect
transistor
housed in a hermetic, high reliability package.
Its noise figure makes this device appropriate for use in low noise amplifiers operating in the 0.
5-10 GHz frequency range.
This GaAs FET device has a nominal 0.
3 micron gate length using airbridge interconnects between drain fingers.
Total gate periphery is 500 microns.
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