Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BUT211X
GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching
npn transistor in a plastic full-pack envelope specially suited for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Inductive fall time CONDITIONS VBE = 0 V TYP.
MAX.
850 400 5 10 32 2.
0 0.
1 UNIT V V A A W V µs
Ths ≤ 25 ˚C IC = 3.
0 A; IB = 0.
4 A ICon = 3.
0 A; ...