Philips Semiconductors
Product specification
Silicon Diffused Power
Transistor
BUX87-1100
GENERAL DESCRIPTION
High voltage, high speed,low capacitance
npn power
transistor in a SOT78 envelope intended for use in the dynamic focus circuit of televisions and monitors.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation CONDITIONS VBE = 0 V TYP.
MAX.
1100 700 0.
5 1 46 UNIT V V A A W
Tmb ≤ 25 ˚C
PINNING - TO220AB
PIN 1 2 3 tab DESCRIPTION emitter collector base collector
PIN CONFIGURATION
tab
SYMBOL
c b
1 23
e
LIMITING VALUES
...