BUZ111S
SPP80N05
SIPMOS ® Power
Transistor
• N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available
Pin 1 Pin 2 Pin 3
G
D
S
Type
VDS 55 V
ID 80 A
RDS(on) 0.
008 Ω
Package
Ordering Code
BUZ111S
TO-220 AB
Q67040-S4003-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TC = 100 °C
ID
A 80
Pulsed drain current
TC = 25 °C
IDpuls
320
E AS
Avalanche energy, single pulse
ID = 80 A, V DD = 25 V, RGS = 25 Ω L = 220 µH, Tj = 25 °C
mJ
700
IAR E AR
Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt
IS = 80 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C...