• AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.
2 mA/°C From 25°C to 150°C 1.
0 mA/°C From 150°C to 175°C Forward Current: 650 mA ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE 1N483B 1N485B 1N486B VRM V RWM V (pk) 80 180 250 V (pk) 70 180 225 I O I O I FSM TA = 150°C TP = 1/120 s TA = 25°C mA mA A 200 50 200 50 200 50 2 2 2 TYPE 1N483B 1N485B 1N486B VF @100mA I R1 at V RWM I R2 at V RM I R3 at V RWM TA = 25°C TA = 25°C TA = 150°C V dc 0.
8 - 1.
0 0.
8 - 1.
0 ...

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