• AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED 1N483B 1N485B 1N486B MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C Operating Current: 200 mA Derating: 1.
2 mA/°C From 25°C to 150°C 1.
0 mA/°C From 150°C to 175°C Forward Current: 650 mA 0.
085/0.
125 2.
16/3.
18 ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified TYPE VRM V RWM IO IO TA = 150°C mA 50 50 50 I FSM TP = 1/120 s TA = 25°C A 2 2 2 V (pk) 1N483B 1N485B 1N486B 80 180 250 V (pk) 70 180 225 mA 200 200 200 FIGURE 1 TYPE VF @100mA I R1 at V RWM TA = 25°C nA dc 25 25 25 I R2 at V RM TA = 25°C µA 100 100 100 ...

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