Part Number
|
K7A801801M |
Manufacturer
|
Samsung semiconductor |
Description
|
256Kx36 & 512Kx18 Synchronous SRAM |
Published
|
Nov 23, 2017 |
Detailed Description
|
K7A803601M K7A801801M
256Kx36 & 512Kx18 Synchronous SRAM
Document Title
256Kx36 & 512Kx18-Bit Synchronous Pipelined Bu...
|
Datasheet
|
K7A801801M
|
Overview
K7A803601M K7A801801M
256Kx36 & 512Kx18 Synchronous SRAM
Document Title
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev.
No.
History
0.
0 Initial draft
0.
1 Modify DC characteristics( Input Leakage Current test Conditions) form VDD=VSS to VDD to Max.
0.
2 Remove 119BGA Package Type.
0.
3 Change DC Characteristics.
ISB value from 65mA to 110mA at -72 ISB value from 60mA to 110mA at -85 ISB value from 50mA to 100mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA
0.
4 1.
Changed tCD from 4.
0ns to 4.
2ns at -85.
Changed tOE from 4.
0ns to 4.
2ns at -85.
2.
Changed DC condition at Icc and parameters Icc ; from 375mA to 400mA at -72, from 340mA to 380mA at -...
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