|
Part Number
|
MIP3E3SMY |
|
Manufacturer
|
Panasonic |
|
Description
|
Silicon MOS type integrated circuit |
|
Published
|
Dec 1, 2017 |
|
Detailed Description
|
MIP3E3SMY
MOS
(IPD)
■ •
(MIP2ExD • •
■ •
■
50% )
VD 700 VC 8 ID 1.1 IDP 1.7 IC 0.1 Tch 150 Tstg −55 ∼ +150
V V A A ...
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|
Datasheet
|
MIP3E3SMY
|
Overview
MIP3E3SMY
MOS
(IPD)
■ •
(MIP2ExD • •
■ •
■
50% )
VD 700 VC 8 ID 1.
1 IDP 1.
7 IC 0.
1 Tch 150 Tstg −55 ∼ +150
V V A A A °C °C
■
Control
Max.
duty clock
SQ RQ
SQ RQ
13.
5±0.
5 4.
2±0.
3 Solder Dip
15.
4±0.
3
2.
8±0.
2 1.
5±0.
2
10.
5±0.
5 9.
5±0.
2 8.
0±0.
2
Unit : mm 4.
5±0.
2
1.
4±0.
1
6.
7±0.
3 2.
8±0.
2
φ 3.
7±0.
2
1.
4±0.
1 0.
8±0.
1
2.
54±0.
3 5.
08±0.
5
(9.
3)
2.
5±0.
2 0.
6+–00.
.
21
123
1 : Control 2 : Source 3 : Drain TO-220-A1 Package
: MIP3E3SMY
Drain
MOSFET
: 2003 8
SLB00054AJD
Source 1
MIP3E3SMY
■ TC = 25°C ± 3°C
PWM /
) *:
fOSC VC = VC(CNT) − 0.
2 V, VD = 5 V
MAXDC VC = VC(CNT) − 0.
2 V, VD = 5 V
*
GPWM
VC = VC(CNT)
IC(SB)1 IC(SB)2 IC(OP) VC(ON) VC(OFF) ∆VC VC(CLP) TSW / TTIM fTIM IC(CHG...
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