GA100SICP12-227
Silicon Carbide Junction
Transistor/
Schottky Diode Co-pack
Features
• 175 °C Maximum Operating Temperature • Gate Oxide Free SiC Switch • Optional Gate Return Pin • Exceptional Safe Operating Area • Integrated SiC
Schottky Rectifier • Excellent Gain Linearity • Temperature Independent Switching Performance • Low Output Capacitance • Positive Temperature Coefficient of RDS,ON • Suitable for Connecting an Anti-parallel Diode
Advantages
• Compatible with Si MOSFET/IGBT Gate Drive ICs • 20 µs Short-Circuit Withstand Capability • Lowest-in-class Conduction Losses • High Circuit Efficiency • Minimal Input Signal Distortion • High Amplifier Bandwidth • Reduced cooling requirement...