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Part Number
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K6T4008U1C |
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Manufacturer
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Samsung semiconductor |
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Description
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CMOS SRAM |
|
Published
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Dec 8, 2017 |
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Detailed Description
|
K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision H...
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Datasheet
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K6T4008U1C
|
Overview
K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
History
0.
0 Initial Draft
0.
1 Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.
5mA → 0.
3mA ISB1 : 10µA → 15µA for commercial parts - Add 32-TSOP1-0820
0.
11 Errata correct - 32-TSOP1-0813 products: T → TG
1.
0 Finalize
Draft Data January 13, 1998
June 12, 1998
Remark Advance
Preliminary
November 7, 1998
January 15, 1999
Final
The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the ...
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