Part Number
|
K6T4016U3C |
Manufacturer
|
Samsung semiconductor |
Description
|
CMOS SRAM |
Published
|
Dec 8, 2017 |
Detailed Description
|
K6T4016V3C, K6T4016U3C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision ...
|
Datasheet
|
K6T4016U3C
|
Overview
K6T4016V3C, K6T4016U3C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No History 0.
0 Initial draft
0.
1 0.
11
Revised
- Speed bin change
Commercial : 70/85ns → 70/85/100ns Industrial : 85/100ns → 70/85/100ns - DC Characteristics change
ICC : 5mA at read/write → 4mA at read ICC1 : 5mA → 6mA ICC2 : 50mA → 45mA ISB : 0.
5mA → 0.
3mA ISB1 : 10µA → 15µA for commercial parts Errata correction
1.
0 Finalize
Draft Date January 13, 1998
June 12, 1998
Remark Advance
Preliminary
August 13, 1998 November 16, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO.
, LTD.
reserve the right to chan...
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