BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with insulated metal base plate • RG on,min = 10 Ohm Type BSM150GB170DN2 E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package HALF-BRIDGE 2 Ordering Code C67070-A2709-A67 1700V 220A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 220 150 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 440 300 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 1250 W + 150 -55 .
.
.
+ 150 ≤ 0.
1 ≤ 0.
21 4000 20 11 F 55 / 150 / 56 Vac mm K/W ...

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