BSM 200 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode • Package with insulated metal base plate Type BSM 200 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package Ordering Code 1200V 290A HALFBRIDGE GAL 2B C67070-A2301-A70 Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 290 200 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 580 400 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 1400 W + 150 -55 .
.
.
+ 150 ≤ 0.
09 ≤ 0.
125 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resista...

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