Part Number
|
BSM200GT120DN2 |
Manufacturer
|
Siemens Semiconductor Group |
Description
|
IGBT |
Published
|
Mar 23, 2005 |
Detailed Description
|
BSM 200 GT 120 DN2
IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast ...
|
Datasheet
|
BSM200GT120DN2
|
Overview
BSM 200 GT 120 DN2
IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 200 GT 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package TRIPACK
Ordering Code C67070-A2519-A67
1200V 300A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 300 200
TC = 25 °C TC = 125 °C
Pulsed collector current, tp = 1 ms
ICpuls
600 400
TC = 25 °C TC = 125 °C
Power dissipation per IGBT
Ptot
1400
W + 150 -55 .
.
.
+ 150 ≤ 0.
09 0.
18 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C
TC = 25 °C
Chip t...
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