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BSM50GD120DN2E3226

Part Number BSM50GD120DN2E3226
Manufacturer Siemens Semiconductor Group
Description IGBT
Published Mar 23, 2005
Detailed Description BSM 50 GD120DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Packa...
Datasheet BSM50GD120DN2E3226




Overview
BSM 50 GD120DN2E3226 IGBT Power Module • Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal Type BSM 50 GD120DN2E3226 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package ECONOPACK 2 Ordering Code C67070-A2514-A67 1200V 50A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 50 45 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 100 90 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 350 W + 150 -55 .
.
.
+ 150 ≤ 0.
35 ≤ 0.
7 2500 16 11 F 55 / 150 / 56...






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