Part Number
|
BSM50GD120DN2E3226 |
Manufacturer
|
Siemens Semiconductor Group |
Description
|
IGBT |
Published
|
Mar 23, 2005 |
Detailed Description
|
BSM 50 GD120DN2E3226
IGBT Power Module
• Power module • 3-phase full-bridge • Including fast free-wheel diodes • Packa...
|
Datasheet
|
BSM50GD120DN2E3226
|
Overview
BSM 50 GD120DN2E3226
IGBT Power Module
• Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate • E3226: long terminals, limited current per terminal
Type BSM 50 GD120DN2E3226 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
IC
Package ECONOPACK 2
Ordering Code C67070-A2514-A67
1200V 50A
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 50 45
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
100 90
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
350
W + 150 -55 .
.
.
+ 150 ≤ 0.
35 ≤ 0.
7 2500 16 11 F 55 / 150 / 56...
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