BSM 75 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 75 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage VCE IC Package HALF-BRIDGE 1 Ordering Code C67076-A2106-A70 1200V 105A Symbol Values 1200 1200 Unit V VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 105 75 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 210 150 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 625 W + 150 -55 .
.
.
+ 150 ≤ 0.
2 ≤ 0.
5 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resi...

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