BSM 75 GD 120 DN2 IGBT Power Module Preliminary data • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type BSM 75 GD 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package ECONOPACK 3 Ordering Code C67070-A2516-A67 1200V 103A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 103 75 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 206 150 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 520 W + 150 -55 .
.
.
+ 150 ≤ 0.
235 ≤ 0.
55 2500 16 11 F 55 / 150 / 56 Vac mm K/W °C TC = 25 °C Chip ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)