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Part Number
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UPD5702TU |
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Manufacturer
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CEL |
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Description
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Si LD MOS POWER AMPLIFIER |
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Published
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Dec 21, 2017 |
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Detailed Description
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NEC's 2.4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU
FEATURES
• MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f =...
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Datasheet
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UPD5702TU
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Overview
NEC's 2.
4 GHz Si LD MOS POWER AMPLIFIER UPD5702TU
FEATURES
• MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.
45 GHz
• ON CHIP OUTPUT POWER CONTROL FUNCTION • SINGLE SUPPLY VOLTAGE:
VDS = 3.
0 V TYP • PACKAGED IN 8 PIN L2MM (2.
0 X 2.
2 X 0.
5mm)
SUITABLE FOR HIGH- DENSITY SURFACE MOUNT
DESCRIPTION
NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.
4 GHz application.
This IC consists of two stage amplifiers.
The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package.
Ideally suited for high density surface mount designs.
NEC's stringent quality assurance and test procedures ensure the highest reliability and ...
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