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1N60S

Part Number 1N60S
Manufacturer CHINA BASE
Description SILICON SCHOTTKY BARRIER DIODE
Published Dec 31, 2017
Detailed Description 1N60P, 1N60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to 1N60P and 1N60S Absolute Maximum Ratings (Ta =...
Datasheet 1N60S




Overview
1N60P, 1N60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to 1N60P and 1N60S Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage Reverse Voltage Average Rectified Output Current Peak Forward Current Surge Forward Current Junction Temperature Storage Temperature Range 1.
9 max 3.
9 max R5 max 4.
5± 1.
0 10.
0± 1.
0 1.
0 max Glass case DO-35-1 Dimensions in mm Max.
0.
5 Max.
1.
9 Min.
27.
5 Black Cathode Band Black Part No.
Black "ST" Brand XXX ST Max.
3.
9 Min.
27.
5 Glass Case DO-35 Dimensions in mm Symbol VRM VR IO IFM Isurge Tj TS Value 45 20 50 150 500 175 - 55 to + 175 Unit V V mA mA mA OC OC Characteristics at Ta = 25 OC Parameter Forward Current at ...






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