Part Number
|
TE28F010 |
Manufacturer
|
Intel |
Description
|
1024K (128K x 8) CMOS FLASH MEMORY |
Published
|
Jan 5, 2018 |
Detailed Description
|
E
28F010 1024K (128K X 8) CMOS FLASH MEMORY
8
n Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
n Quick-Puls...
|
Datasheet
|
TE28F010
|
Overview
E
28F010 1024K (128K X 8) CMOS FLASH MEMORY
8
n Flash Electrical Chip-Erase
1 Second Typical Chip-Erase
n Quick-Pulse Programming Algorithm
10 µs Typical Byte-Program 2 Second Chip-Program
n 100,000 Erase/Program Cycles n 12.
0 V ±5% VPP n High-Performance Read
90 ns Maximum Access Time
n CMOS Low Power Consumption
10 mA Typical Active Current 50 µA Typical Standby Current 0 Watts Data Retention Power
n Integrated Program/Erase Stop Timer
n Command Register Architecture for
Microprocessor/Microcontroller Compatible Write Interface
n Noise Immunity Features
±10% VCC Tolerance Maximum Latch-Up Immunity
through EPI Processing
n ETOX™ Nonvolatile Flash Technology
EPROM-Comp...
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