Green Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect
Transistor
SP8075E
Ver 1.
0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
3.
0 @ VGS=10V 30V 30A
3.
8 @ VGS=4.
5V
FEATURES Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
Pin 1
TSON 3.
3 x 3.
3
D5 D6 D7 D8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage ID Drain Current-Continuous c
TA=25°C
IDM -Pulsed a c
PD
Maximum Power Dissipation
TA=25°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient...