STB/P438SGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect
Transistor
Ver1.
0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
9 @ VGS=10V 40V 60A
10 @ VGS=4.
5V
FEATURES Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
GS S TB S E R IE S T O -263(DD-P AK )
G D S
S TP S E R IE S TO-220
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source Voltage VGS Gate-Source Voltage
40 ±20
ID
Drain Current-Continuous a
TA=25°C
TA=70°C
60 50
IDM -Pulsed b EAS Avalanche Energy c
240 196
PD
Maximum Power Dissipation a
TA=25°C...