RF PhotoMOS (AQV221N) Lower output capacitance and RF PhotoMOSon resistance.
High speed switching.
(Turn on time: 0.
2ms, Turn off time: 0.
08ms).
(AQV221N) 8.
8 .
346 6.
4 .
252 3.
9 .
154 8.
8 .
346 1 2 3 6.
4 .
252 3.
6 .
142 mm inch 6 5 4 FEATURES 1.
Low output capacitance between output terminals and low ONresistance 2.
High speed switching (Turn on time: typ.
200μs) 3.
High sensitivity Control loads up to 250mA with input current 5mA 4.
Low-level off state leakage current The SSR has an off state leakage current of several milliamperes, where as this PhotoMOS relay has typ.
20pA even with the rated load voltage 5.
Controls low-level analog signals PhotoMOS relays features extremely low-clo...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)