BFR 193
NPN Silicon RF
Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz
F = 1.
3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 193 RCs Q62702-F1218 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 80 10 mW 580 150 - 65 .
.
.
+ 150 - 65 .
.
.
+ 150 ≤ 140 °C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 69 °C
Junction temperature Ambient temperature Storage...