Low Noise Silicon Bipolar RF
Transistor
• For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers • fT = 8 GHz, NFmin = 1 dB at 900 MHz • Pb-free (RoHS compliant) package • Qualification report according to AEC-Q101 available
BFR193
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFR193
Marking
Pin Configuration
RCs
1=B
2=E
3=C
Package SOT23
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 69°C Junction temperature Storage temperat...