BFR280W
NPN Silicon RF
Transistor
For low noise, low-power amplifiers in mobile
3
communication systems (pager, cordless telephone) at collector currents from 0.
2 mA to 8 m
fT = 7.
5 GHz
F = 1.
5 dB at 900 MHz
2 1
VSO05561
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR280W
Maximum Ratings Parameter
Marking REs 1=B
Pin Configuration 2=E
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SOT323
Value Unit
3=C
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS = 115 °C 1) Junction temperature Ambient temperature Storage temperature Therm...