BFR360F
NPN Silicon RF
Transistor Preliminary data
Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.
5 GHz and Pout 10 dBm Low noise figure: 1.
0 dB at 1.
8 GHz
3 1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR360F
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS 98°C Junction temperature Ambient temperature Storage temperature Thermal Resistance Parameter Junction - soldering point2)
Marking FBs
Pin Configuration 1=B 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Ts...