BFR380F
NPN Silicon RF
Transistor Preliminary data
High current capability and low figure for
wide dynamic range application
Low voltage operation Ideal for low phase noise oscillators up to 3.
5 GHz Low noise figure: 1.
1 dB at 1.
8 GHz
3 1
2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR380F
Maximum Ratings Parameter
Marking FCs
Pin Configuration 1=B 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS Value
Package TSFP-3
Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)
TS 95°C
6 15 15 2 80 14 380 150 -65 .
.
.
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