140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
BFR91
RF & MICROWAVE DISCRETE LOW POWER
TRANSISTORS
Features
• • • High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA Low Noise Figure – NF = 1.
9 dB (typ) @ f = 0.
5 GHz, 2.
5 dB (typ) @ 1GHz High Power Gain – Gmax = 16 dB (typ) @ f = 0.
5 GHz, 10.
9dB (typ) @ 1GHz
Macro T
(STYLE #2)
DESCRIPTION: Designed primarily for use in high-gain, low noise, small-signal amplifiers.
Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector C...