BFS17P
NPN Silicon RF
Transistor
Features
• Maximum collector-emitter voltage VCE0 = 15 V • Maximum collector current IC = 25 mA • Noise figure NF = 3.
5 dB • 3rd order output intercept point OIP3 = 21.
5 dBm • 1 dB output compression point P-1dB = 10 dBm • Transition frequency fT = 1.
4 GHz • Maximum total power dissipation Ptot = 280 mW • Package: SOT23 • Pb-free (RoHS compliant) package
Potential Applications
• For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • For mixers and oscillators in sub-GHz applications
Device Information
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type / Ordering code
Marking
Pin Configuration
BFS1...