DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM800 EDGE power module FEATURES • Typical GSM EDGE performance at a supply voltage of 26 V: – Output power = 2.
5 W – Gain = 30 dB – Efficiency = 16% – ACPR −65 dBc at 400 kHz – rms EVM 0.
4% – peak EVM 1.
2% • Low distortion to a GSM EDGE signal • Excellent 2-tone performance • Low die temperature due to copper flange • Integrated temperature compensated bias • 50 Ω input/output impedance • Flat gain over frequency band.
APPLICATIONS • Base station RF power amplifiers in the 869 to 894 MHz frequency r...

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