DISCRETE SEMICONDUCTORS
DATA SHEET
M3D390
BLF1047 UHF power LDMOS
transistor
Preliminary specification Supersedes data of 1999 July 01 2000 Feb 02
Philips Semiconductors
Preliminary specification
UHF power LDMOS
transistor
FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz).
handbook, halfpage
BLF1047
PINNING - SOT541A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
APPLICATIONS • Communication transmitter applications in the UHF frequency range.
1
3
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS
transistor encap...