DISCRETE SEMICONDUCTORS
DATA SHEET
BLF175 HF/VHF power MOS
transistor
Product specification September 1992
Philips Semiconductors
Product specification
HF/VHF power MOS
transistor
FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures excellent reliability.
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS
transistor designed for large signal amplifier applications in the HF/VHF frequency range.
The
transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap.
All leads are isolated from the flange.
A marking code, showing gate-source voltage (VGS) information...