DISCRETE SEMICONDUCTORS
DATA SHEET
BLF177 HF/VHF power MOS
transistor
Product specification File under Discrete Semiconductors, SC08a September 1992
Philips Semiconductors
Product specification
HF/VHF power MOS
transistor
FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch.
andbook, halfpage 1
BLF177
PIN CONFIGURATION
4
d
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS
transistor designed for industrial and military applications in the HF/VHF frequency range.
The
transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap.
All leads are isolated from the flange.
...