DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D379
BLF2047L UHF power LDMOS
transistor
Product specification Supersedes data of 1999 Apr 01 1999 Dec 06
Philips Semiconductors
Product specification
UHF power LDMOS
transistor
FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (1.
8 to 2 GHz) • Internal input and output matching for high gain and efficiency.
handbook, halfpage
BLF2047L
PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION
1
APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 M...