SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
FEATURES ᴌHigh Breakdown Voltage : VCEO=-100V.
ᴌLow Collector-Emitter Saturation Voltage.
: VCE(sat)=-2.
0V(Max.
) ᴌComplementary to KTD525.
MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dissipation (Tc=25ᴱ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IE IB PC Tj Tstg
RATING -100 -100 -5 -5 5 -0.
5 40 150
-55ᴕ150
UNIT V V V A A A W ᴱ ᴱ
H
E Q
KTB595
TRIPLE DIFFUSED
PNP TRANSISTOR
A R S
F B
D
T
L CC
MM K
123 J
1.
BASE 2.
COLLECTOR (HEAT SINK) 3.
EMITTER
O NG
P
DIM A B
C
D E F...