MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Internally Clamped N-Channel IGBT
This Logic Level Insulated Gate Bipolar
Transistor (IGBT) features Gate–Emitter ESD protection, Gate Collector Over– Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver.
• Temperature Compensated Gate – Collector Clamp Limits
Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices • Low Saturation Voltage • High Pulsed Current Capability
C
Order this document by MGP15N43CL/D
MGP15N43CL
15 AMPERES N–CHANNEL IGBT
VCE(on) = 1.
8 V 430 VOLTS CLAMPED
GG C E
CASE 221A–09 STYLE 9
E TO–220AB
MAXIMU...