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FA2659-AL

SMT Gate Drive Transformer

Description

Document 561 SMT Gate Drive Transformer • Designed for transformer coupled MOSFET and IGBT gate drive circuits; operating frequency: 50 kHz to 2 MHz. • 2250 Vdc, one minute primary to secondary isolation • Requires only 56 mm2 of board space. • Specified by National Semiconductor on AN-1521 for their POE+PHYTEREV-I/-E evaluation boards. • Specifiedonth...


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