DISCRETE SEMICONDUCTORS
DATA SHEET
BLV99/SL UHF power
transistor
Product specification September 1991
Philips Semiconductors
Product specification
UHF power
transistor
FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial
transistor encapsulated in a 4-lead SOT172D envelope with a ceramic cap.
It is designed primarily for use as a driver stage in base stations in the 900 MHz communications band.
All leads are isolated from the mounting base.
PINNING - SOT172D PIN 1 2 3 4 base collector emitter DESCRIPTION emitter WARNING Product and environmental safety - toxic materials
2 3
h...