Part Number
|
SCT2H12NY |
Manufacturer
|
ROHM |
Description
|
N-channel SiC power MOSFET |
Published
|
Mar 5, 2018 |
Detailed Description
|
SCT2H12NY
N-channel SiC power MOSFET
Datasheet
VDSS RDS(on) (Typ.)
ID PD
1700V 1.15
4A 44W
Features 1) Low on-resi...
|
Datasheet
|
SCT2H12NY
|
Overview
SCT2H12NY
N-channel SiC power MOSFET
Datasheet
VDSS RDS(on) (Typ.
)
ID PD
1700V 1.
15
4A 44W
Features 1) Low on-resistance
2) Fast switching speed
3) Long creepage distance with no center lead
4) Simple to drive
5) Pb-free lead plating ; RoHS compliant
Application ・Auxilialy power supplies ・Switch mode power supplies
Outline
TO-268-2L
(2)
Inner circuit
(1) (3)
(2)
(1) Gate
(2) Drain
*1 (3) Source
(1)
*1 Body Diode
(3)
Packaging specifications Packing
Embossed tape
Reel size (mm)
330
Tape width (mm) Type
Basic ordering unit (pcs)
24 400
Taping code
TB
Marking
SCT2H12NY
Absolute maximum ratings (Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain curre...
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