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Part Number
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BAS516 |
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Manufacturer
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Toshiba |
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Description
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Switching Diode |
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Published
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Mar 6, 2018 |
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Detailed Description
|
Switching Diodes Silicon Epitaxial Planar
BAS516
1. Applications
• Ultra-High-Speed Switching
2. Packaging and Internal ...
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|
Datasheet
|
BAS516
|
Overview
Switching Diodes Silicon Epitaxial Planar
BAS516
1.
Applications
• Ultra-High-Speed Switching
2.
Packaging and Internal Circuit
BAS516
1: Cathode 2: Anode
ESC
3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
Peak reverse voltage
VRM
100 V
Reverse voltage
VR
100
Peak forward current
IFM
500 mA
Average rectified current
IO
250
Non-repetitive peak forward surge current
IFSM
(Note 1)
1A
Power dissipation
PD (Note 2)
150 mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the s...
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