TOSHIBA CONFIDENTIAL TC58DVG3S0ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58DVG3S0E is a single 3.
3V 8 Gbit (8,858,370,048 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 128) bytes × 64 pages × 4096blocks.
The device has two 4224-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4224-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 4224 bytes × 64 pages).
The TC58DVG3S0E is a serial-type memory device which utilizes the I/O pins fo...

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