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Part Number
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TC58NYG1S3HBAI6 |
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Manufacturer
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Toshiba |
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Description
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2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
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Published
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Mar 10, 2018 |
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Datasheet
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TC58NYG1S3HBAI6
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Features
TC58NYG1S3HBAI6
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
2 GBIT (256M 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory...
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