Part Number
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TC58NYG2S0FBAI4 |
Manufacturer
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Toshiba |
Description
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4 GBIT (512M x 8-BIT) CMOS NAND E2PROM |
Published
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Mar 10, 2018 |
Detailed Description
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TC58NYG2S0FBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M 8 BIT) CMOS NAND E2PROM
DESCRIP...
|
Datasheet
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TC58NYG2S0FBAI4
|
Overview
TC58NYG2S0FBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NYG2S0F is a single 1.
8V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 224) bytes 64 pages 2048blocks.
The device has two 4320-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4320-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes 14 Kbytes: 4320 bytes 64 pages).
The TC58NYG2S0F is a serial-type memory device which utilizes the I/O pins for both address and data inpu...
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